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Important questions about Electronic Devices And Circuits. Electronic Devices And Circuits MCQ questions with answers. Electronic Devices And Circuits exam questions and answers for students and interviews.

1. A p - n junction diode has

Options

A : low forward and high reverse resistance

B : a non-linear v - i characteristics

C : zero forward current till the forward voltage reaches cut in value

D : all of the above

2. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C. Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

Options

A : Both A and R are true and R is correct explanation of A

B : Both A and R are true but R is not a correct explanation of A

C : A is true but R is false

D : A is false but R is true

3. Calculate the stability factor and change in I C from 25°C to 100°C for, ? = 50, R B / R E = 250, ?I C0 = 19.9 nA for emitter bias configuration.

Options

A : 42.53, 0.85 ?A

B : 40.91, 0.58 ?A

C : 40.91, 0.58 ?A

D : 41.10, 0.39 ?A

Options

A : True

B : False

C :

D :

Options

A : 1/11 k?

B : 1/5 k?

C : 5 kW

D : 11 kW

Options

A : True

B : False

C :

D :

7. Crossover distortion behaviour is characteristic of

Options

A : class A O/P stage

B : class B O/P stage

C : class AB output stage

D : common pulse O/P state

8. In which of these is reverse recovery time nearly zero?

Options

A : Zener diode

B : Tunnel diode

C : Schottky diode

D : PIN diode

10. In which region of a CE bipolar transistor is collector current almost constant?

Options

A : Saturation region

B : Active region

C : Breakdown region

D : Both saturation and active region

Options

A : 1

B : 2

C : 3

D : 4

2. When a voltage is applied to a semiconductor crystal then the free electrons will flow.

Options

A : towards positive terminal

B : towards negative terminal

C : either towards positive terminal or negative terminal

D : towards positive terminal for 1 ?s and towards negative terminal for next 1 ?s

3. In a bipolar transistor the barrier potential

Options

A : 0

B : a total of 0.7 V

C : 0.7 V across each depletion layer

D : 0.35 V

Options

A : tunnel diode

B : MOSFET

C : JFET

D : photo diode

5. At very high temperatures the extrinsic semi conductors become intrinsic because

Options

A : drive in diffusion of dopants and carriers

B : band to band transition dominants over impurity ionization

C : impurity ionization dominants over band to band transition

D : band to band transition is balanced by impurity ionization

Options

A : 7 mA

B : 6.3 mA

C : 0.7 mA

D : 0

Options

A : True

B : False

C :

D :

Options

A : 1

B : 2

C : 3

D : 1 or 2

9. In an n channel JFET, the gate is

Options

A : n type

B : p type

C : either n or p

D : partially n & partially p

Options

A : True

B : False

C :

D :

Options

A : 30 pA

B : 40 pA

C : 50 pA

D : 60 pA